Gate Driver IC for IGBTs and SiC MOSFETs Driving EV Inverters

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  • The RAJ2930004AGM is a compact gate driver IC for EV purposes.
  • The gate driver IC can present knowledge switch with excessive voltage isolation between the first circuit (MCU facet) and the secondary circuit (IGBT facet).

The RAJ2930004AGM from Renesas is a newly launched Gate driver IC for driving EV inverters. It’s able to driving each IGBTs and SiC MOSFET and has a built-in 3.75kVrms (kV root imply sq.) isolator, which is greater than the two.5kVrms isolator within the earlier technology merchandise.

The RAJ2930004AGM IC boasts superior CMTI (Frequent Mode Transient Immunity) efficiency at 150 V/ns (nanosecond) or greater, offering dependable communication and elevated noise immunity whereas assembly the excessive voltages and quick switching speeds required in inverter methods. It might probably assist energy units with a face up to voltage of as much as 1200V, which makes it appropriate to make use of in cost-effective inverter methods.

Gate drivers are important elements in energy electronics, as they management the gate of energy digital units equivalent to MOSFETs, IGBTs, and thyristors. They serve a number of important features: Isolation, EMI discount, sign shaping, drive power, and many others. Gate drivers additionally present an interface between the inverter management MCU and the IGBTs and SiC MOSFETs that ship energy to the inverter

The gate driver MOSFET is available in a compact SOIC16 bundle. The IC affords a number of safety and fault detection features such because the on-chip energetic Miller clamp, gentle turn-off, overcurrent safety (DESAT safety), under-voltage lockout (UVLO), and fault suggestions. The MOSFET driver may be employed in harsh working situations and has a large operational temperature vary from -40 to 125°C (Tj:150°C max.)

“Renesas is happy to supply the second-generation gate driver IC for automotive purposes with excessive isolation voltage and superior CMTI efficiency,” mentioned Akira Omichi, Vice President of Renesas’ Automotive Analog Utility Particular Enterprise Division. “We are going to proceed to drive software improvement for EVs by providing options that reduce energy loss and meet excessive ranges of useful security in our clients’ methods.”

Key Options of the RAJ2930004AGM Gate Driver IC

• Working temperature vary: -40 to 125°C (Tj:150°C max.)
• Face up to Isolation voltage: 3.75kVrms
• CMTI (Frequent Mode Transient Immunity): 150V/ns
• Output peak present: 10A

Safety/fault detection features
• On-chip energetic Miller clamp
• Smooth turn-off
• Overcurrent safety (DESAT safety)
• Underneath-voltage lockout (UVLO)
• Fault suggestions

The Renesas MOSFET driver will help improve EV adoption by permitting engineers to construct cost-efficient inverters, thereby minimizing environmental impacts.


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